SKI10297 - N-channel Trench Power MOSFET

Datasheet Summary

Features

V(BR)DSS --------------------------------100 V (ID = 100 µA).
ID ---------------------------------------------------------- 34 A.
RDS(ON) -------- 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A).
Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A).
Low Total Gate Charge.
High Speed Switching.
Low On-Resistance.
Capable of 4.5 V Gate Drive.
100 % UIL Tested.
RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

Sanken

📥 Download Datasheet

Datasheet Details

Part number	SKI10297
Manufacturer	Sanken
File Size	588.54 KB
Description	N-channel Trench Power MOSFET
Datasheet	SKI10297 Datasheet
Additional preview pages of the SKI10297 datasheet.

📁 Similar Datasheet

SKI10297 - N-Channel MOSFET (INCHANGE)
SKI10123 - N-Channel MOSFET (INCHANGE)
SKI10195 - N-Channel MOSFET (INCHANGE)
SKI-FF530 - Infrared emitting diode which mounted high power 850 nm IR CHIP (ETC)
SKI03021 - N-Channel MOSFET (INCHANGE)
SKI03036 - N-Channel MOSFET (INCHANGE)
SKI03063 - N-Channel MOSFET (INCHANGE)
SKI04024 - N-Channel MOSFET (INCHANGE)
SKI04033 - N-Channel MOSFET (INCHANGE)
SKI04044 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Sanken

SKI10123 - N-channel Trench Power MOSFET
SKI10195 - N-channel Trench Power MOSFET
SKI03021 - N-channel Trench Power MOSFET
SKI03036 - N-channel Trench Power MOSFET
SKI03063 - N-channel Trench Power MOSFET
SKI03087 - N-channel Trench Power MOSFET
SKI04024 - N-channel Trench Power MOSFET
SKI04033 - N-channel Trench Power MOSFET

Full PDF Text Transcription

Click to expand full text

100 V, 34 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10297 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 34 A  RDS(ON) -------- 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.

Published: Apr 18, 2016 |