Sanken SLA5037
N-channel Arrays
SLA5037 N-channel General purpose External dimensions A
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● SLA (12-pin) Absolute maximum ratings (Ta=25°C) Symbol Ratings Unit VDSS 100 V VGSS ±20 V ID ±10 A ID(pulse) ±40 (PW≤1ms) A EAS* 200 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W PT 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C * : VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15. sEquivalent circuit diagram Electrical characteristics Symbol Specifications min typ max V(BR)DSS 100 IGSS ±100 IDSS 100 VTH 1.0 2.0 Re(yfs) 8 13 RDS(ON) 60 80 75 95 Ciss 1630 Coss 480 td(on) 30 tr 45 td(off) 100 tf 40 VSD 1.1 1.5 trr 300 3 6 7 10 Unit V nA µA V S mΩ mΩ pF pF ns ns ns ns V ns (Ta=25°C) Conditions ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 50V, RL=10Ω, VGS=5V, see Fig.
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● SLA (12-pin) Absolute maximum ratings (Ta=25°C) Symbol Ratings Unit VDSS 100 V VGSS ±20 V ID ±10 A ID(pulse) ±40 (PW≤1ms) A EAS* 200 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W PT 40 (Tc=25°C,with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C * : VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15. sEquivalent circuit diagram Electrical characteristics Symbol Specifications min typ max V(BR)DSS 100 IGSS ±100 IDSS 100 VTH 1.0 2.0 Re(yfs) 8 13 RDS(ON) 60 80 75 95 Ciss 1630 Coss 480 td(on) 30 tr 45 td(off) 100 tf 40 VSD 1.1 1.5 trr 300 3 6 7 10 Unit V nA µA V S mΩ mΩ pF pF ns ns ns ns V ns (Ta=25°C) Conditions ID=100µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 50V, RL=10Ω, VGS=5V, see Fig.