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SLA5227 - IGBT

Features

  • Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area Low saturation voltage IGBT VCE(sat) = 1.7V max Low saturation voltage diode bridge VF = 1.1V max The clip lead is adopted for inner lead. Low inductance, low resistance, high current capability The smoke generation and explosion are less likely to occur in case of destruction. Package Equivalent circuit.

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Full PDF Text Transcription

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SANKEN ELECTRIC http://www.sanken-ele.co.jp Oct.2010 Features Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area Low saturation voltage IGBT VCE(sat) = 1.7V max Low saturation voltage diode bridge VF = 1.1V max The clip lead is adopted for inner lead. Low inductance, low resistance, high current capability The smoke generation and explosion are less likely to occur in case of destruction.
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