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2SK3254
N- Channel MOS Silicon FET Very High-Speed Switching Applications
TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature
* ):Chip Performance Shown
unit VDSS VGSS ID* IDP PD Tch Tstg 500 ±30 10 40 50 150 --55 to ±150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA , VGS=0 VDS=500V , VGS=0 VGS=±30V , VDS=0 VDS=10V , ID=1mA VDS=10V , ID=5A ID=5A , VGS=10V VDS=20V VDS=20V VDS=20V VDS=200V VGS=10V , , , , f=1MHz f=1MHz f=1MHz ID=5A 500 250 ±100 3.5 6.3 0.8 880 140 48 30 17 35 100 38 1.5 1.