Diffused Junction Silicon Diode
Low VF Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low noise at the time of reverse recovery. Low forward voltage (VF max=1.3V). Halogen free compliance. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 5 Sine wave.
HIGH EFFICIENCY 1.5MHZ 1.2A SYNCHRONOUS STEP DOWN CONVERTER
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Ordering number : ENA1705
UD0506T
SANYO Semiconductors
DATA SHEET
UD0506T
Features
• • • • •
Diffused Junction Silicon Diode
Low VF Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low noise at the time of reverse recovery. Low forward voltage (VF max=1.3V). Halogen free compliance.
UD0506T Datasheet
