Diffused Junction Silicon Diode
Low VF Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Low VF. Low noise at the time of reverse recovery. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current R. M. S Forward Current Surge Forward C.
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Ordering number : ENA1544
UD1006LS-SB5
SANYO Semiconductors
DATA SHEET
UD1006LS-SB5
Features
• • • • •
Diffused Junction Silicon Diode
Low VF Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Low VF. Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current R.M.