12A01SP Datasheet | SANYO

Features - - - Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25m A]. Small ON-resistance (Ron). 0.4 0.5 1.8 15.0 1 2 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings --15 --12 --5 --500 --1.0 400 150 --55 to +150 Unit V V V m A A m W °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 3.0 3.8nom Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO h FE f T VCB=--12V, IE=0 VEB=-4V, IC=0 VCE=--2V, IC=--10m A VCE=--2V, IC=--50m A 300 490 Conditions Ratings min typ max --0.1 --0.1 700 MHz Unit µA µA Marking : XP Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor pany TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2203 TS IM TA-100570 No.7480-1/4 Continued from preceding...