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2SA1371 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown votage : VCEO≥300V.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).
  • Adoption of MBIT process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1371 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temper.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Package Dimensions unit:mm 2006B [2SA1371/2SC3468] 6.0 5.0 Features · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.