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2SA1434 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Ultrasmall-sized package permitting 2SA1434-used sets to be made smaller, slimer.
  • Adoption of FBET process.
  • High DC current gain (hFE=500 to 1200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V). Package Dimensions unit:mm 2018B [2SA1434] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.8 1.1 1 : Base 2 : Emitter 3 : Collector SANYO : CP Parameter Symbol Co.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA1433 PNP Epitaxial Planar Silicon Transistor
2SA1435 PNP Epitaxial Planar Silicon Transistor
2SA1436 PNP Epitaxial Planar Silicon Transistor
2SA1437 PNP Epitaxial Planar Silicon Transistor
2SA1402 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Ultrasmall-sized package permitting 2SA1434-used sets to be made smaller, slimer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2018B [2SA1434] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.8 1.