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2SA1526 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • On-chip bias resistance : R1=10kΩ, R2=10kΩ.
  • Large current capacity : IC=500mA. Package Dimensions unit:mm 2003B [2SA1526/2SC3920] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 ( ) : 2SA1526 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

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Datasheet Details

Part number 2SA1526
Manufacturer Sanyo Semicon Device
File Size 32.64 KB
Description PNP/NPN Epitaxial Planar Silicon Transistors
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Full PDF Text Transcription

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Ordering number:ENN2150B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1526/2SC3920 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2003B [2SA1526/2SC3920] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 ( ) : 2SA1526 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.
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