Datasheet4U Logo Datasheet4U.com

2SA1669 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • High cutoff frequnecy : fT=3.0GHz typ.
  • High power gain : MAG=11dB typ (f=0.9GHz).
  • Small noise figure : NF=2.0dB typ (f=0.9GHz) Package Dimensions unit:mm 2018B [2SA1669] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1669 PNP Epitaxial Planar Silicon Transistors Kexin
2SA1661 GENERAL PURPOSE TRANSISTOR HOTTECH
2SA1661 Silicon NPN Transistor GME
2SA1661 PNP Transistor Jin Yu Semiconductor
2SA1661 PNP Transistor JCST

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA1606 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1607 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1624 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
2SA1641 PNP Epitaxial Planar Silicon Transistor
2SA1654 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN2972 PNP Epitaxial Planar Silicon Transistors 2SA1669 High-Frequency Amplifier Applications Features · High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ (f=0.9GHz) · Small noise figure : NF=2.0dB typ (f=0.9GHz) Package Dimensions unit:mm 2018B [2SA1669] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.