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2SA1704 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter voltage.
  • Large current capacity and wide ASO.
  • Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications · Voltage regulators, relay drivers. lamp drivers. Package Dimensions unit:mm 2064 [2SA1704/2SC4484] Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter voltage. · Large current capacity and wide ASO. · Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)30 (–)25 (–)6 (–)2.