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2SA1770 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of MBIT process.
  • High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tst.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.54 2.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 1 150 –55 to +150 4.0 1.