2SA1784 Key Features
- Adoption of MBIT process
- High breakdown voltage (VCEO≥400V)
- Excellent linearity of hFE
| Part Number | Description |
|---|---|
| 2SA1781 | PNP / NPN Transistor |
| 2SA1783 | PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| 2SA1785 | PNP Epitaxial Planar Silicon Transistor |
| 2SA1786 | PNP Epitaxial Planar Silicon Transistor |
| 2SA1787 | PNP/NPN Epitaxial Planar Silicon Transistors |