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2SA1831 - PNP Triple Diffused Planar Silicon Transistors

Key Features

  • High breakdown voltage (VCEO min=.
  • 800V).
  • Small Cob (Cob typ=1.6pF).
  • High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteris.

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Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).