• Part: 2SA1831
  • Description: PNP Triple Diffused Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 89.62 KB
Download 2SA1831 Datasheet PDF
SANYO
2SA1831
Features - High breakdown voltage (VCEO min=- 800V). - Small Cob (Cob typ=1.6p F). - High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO h FE f T Cob VCE(sat) VBE(sat) VCB=- 800V, IE=0 VEB=- 5V, IC=0 VCE=- 5V, IC=- 2m A VCE=- 10V, IC=- 2m A VCB=- 100V, f=1MHz IC=- 1m A, IB=- 200µA IC=- 1m A, IB=- 200µA JEDEC : TO-220AB EIAJ : SC-46 E : Emitter C : Collector B : Base Ratings - 800 - 800 - 7 - 20 - 60 1.75 150 -...