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2SA2037 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of MBIT process.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications ( ):2SA2037 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers and printer drivers. Features • Adoption of MBIT process. • Large current capacity. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Specifications ( ):2SA2037 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Package Dimensions unit : mm 2042B 8.0 4.0 1.0 1.0 [2SA2037 / 2SC5694] 3.3 1.