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2SA2040 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2044B [2SA2040 / 2SC5707] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1.

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w w w . D a t a S h e e t . c o . k r Ordering number : ENN6913 2SA2040/2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications • Package Dimensions unit : mm 2045B [2SA2040 / 2SC5707] 6.5 5.0 4 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2044B [2SA2040 / 2SC5707] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.