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2SA2117 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of MBIT process.
  • High-speed switching.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA2117 Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • Adoption of MBIT process. • High-speed switching. • Large current capacitance. • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA2117 Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.