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2SB1142 - PNP Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings (.
  • )60 (.
  • )50 (.
  • )6 (.
  • )2.5 (.
  • )5.0 1.5 Unit V V V A A W W Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipati.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042A [2SB1142/2SD1682] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings (–)60 (–)50 (–)6 (–)2.5 (–)5.0 1.