2SB885
2SB885 is PNP Transistor manufactured by SANYO.
Features
- High DC current gain.
- High current capacity and wide ASO.
- Low saturation voltage.
Package Dimensions unit:mm 2010C
[2SB885/2SD1195]
( ) : 2SB885
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
ICBO IEBO h FE f T VCE(sat)
VCB=(- )80V, IE=0 VEB=(- )5V, IC=0 VCE=(- )3V, IC=(- )2.5A VCE=(- )5V, IC=(- )2.5A IC=(- )2.5A, IB=(- )5m A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(- )2.5A, IB=(- )5m A
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Ratings (- )110 (- )100 (- )6 (- )5 (- )8 1.75 35 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
4000 20 0.9
(- 1.0) max (- )0.1 (- )3.0
(- )1.5
(- )2.0
Unit m A m A
MHz V V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such...
