2SC2344
Ordering number:ENN544G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications
Package Dimensions unit:mm 2010C
[2SA1011/2SC2344]
10.2 3.6 5.1 4.5 1.3
2.7 18.0 5.6
1.2 0.8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C w w w . D a t a S
Conditions
( ) : 2SA1011
1 : Base 2 : Collector 3 : Emitter SANYO : TO220AB
Ratings (- )180 (- )160 Unit V V V A A W
˚C ˚C h e e t
. c o
. k r
(- )6 (- )1.5 (- )3 25 150
- 55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage
Rank h FE...
