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2SC2999 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • FBET series.
  • Very small-sized package permitting sets to be smallsized and slim.
  • High fT (fT=750MHz typ. ) and small Cre (Cre=0.6pF typ). Package Dimensions unit:mm 2033 [2SC2999] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions B : Base C : Collector E : Emi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features · FBET series. · Very small-sized package permitting sets to be smallsized and slim. · High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ).