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2SC3042 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage (VCBO≥500V).
  • Fast switching speed.
  • Wide ASO. Package Dimensions unit:mm 2022A [2SC3042] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 500 400.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN938B NPN Triple Diffused Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3042] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 500 400 7 12 25 4 2.5 100 150 –55 to +150 Unit V V V A A A W W ˚C ˚C www.DataSheet4U.