2SC3083
2SC3083 is NPN Triple Diffused Planar Silicon Transistor manufactured by SANYO.
Features
- High breakdown voltage (VCBO≥500V).
- Fast switching speed.
- Wide ASO.
Package Dimensions unit:mm 2022A
[2SC3083]
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
VCBO VCEO VEBO
IC ICP IB PC
PW≤300µs, Duty Cycle≤10% Tc=25˚C
500 400
7 6 12 2 2.5 60
Junction Temperature
Tj
Storage Temperature
Tstg
- 55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat)
VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A
10 10 15- 50- 8 1.0 1.5
- : The h FE1 of the 2SC3083 is classified as follows. When specifying the h FE1 rank, specify two ranks or more in principle. 15 L 30 20 M 40 30 N 50
Unit V V V A A A W W ˚C ˚C
Unit
µA...
