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2SC3142 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • FBET series.
  • Compact package enabling compactness of sets.
  • High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions unit:mm 2018A [2SC3142] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Paramete.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features · FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ).