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2SC3392 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET process.
  • High breakdown voltage : VCEO=(.
  • )50V.
  • Large current capacitiy and high fT.
  • Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time Test Circuit ( ) : 2SA1338 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Ba.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC3393 PNP/NPN Epitaxial Planar Silicon Transistors
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2SC3332 PNP/NPN Epitaxial Planar Silicon Transistors
2SC3361 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small- sized, slim.