2SC3392 Overview
Key Features
- Adoption of FBET process
- High breakdown voltage : VCEO=(–)50V
- Large current capacitiy and high fT
| Part | 2SC3392 |
|---|---|
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Category | Transistor |
| Manufacturer | SANYO |
| Size | 153.41 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| C3392 | SANYO | 2SC3392 |
| 2SC3392 | Kexin Semiconductor | NPN Epitaxial Planar Silicon Transistors |
| 2SC3390 | Hitachi Semiconductor | Silicon NPN Epitaxial Transistor |
| 2SC3391 | Hitachi Semiconductor | Silicon NPN Epitaxial Planar Transistor |
| 2SC3399 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |