Datasheet4U Logo Datasheet4U.com

2SC3686 - NPN Transistor

Key Features

  • Fast speed (tf typ=100ns).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3686] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3686 SILICON POWER TRANSISTOR SavantIC
2SC3686 Silicon NPN Power Transistors Inchange Semiconductor
2SC3680 Silicon NPN Transistor Sanken electric
2SC3680 SILICON POWER TRANSISTOR SavantIC
2SC3680 Silicon NPN Power Transistors Inchange Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC3685 NPN Transistor
2SC3687 NPN Triple Diffused Planar Silicon Transistor
2SC3688 NPN Triple Diffused Planar Silicon Transistor
2SC3689 NPN Epitaxial Planar Silicon Transistor
2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN1938A NPN Triple Diffused Planar Silicon Transistor 2SC3686 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications · Ultrahigh-definition color display horizontal deflection output. Features · Fast speed (tf typ=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.