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2SC3770 - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

  • High power gain : PG=15dB typ (f=0.4GHz).
  • High cutoff frequency : fT=1.2GHz typ. Package Dimensions unit:mm 2018A [2SC3770] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions.

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Datasheet Details

Part number 2SC3770
Manufacturer Sanyo Semicon Device
File Size 72.82 KB
Description NPN Epitaxial Planar Silicon Transistor
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Full PDF Text Transcription

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Ordering number:EN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications · UHF/VHF frequency converters, local oscillators, HF amplifiers. Features · High power gain : PG=15dB typ (f=0.4GHz). · High cutoff frequency : fT=1.2GHz typ.
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