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2SC3792 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET process.
  • High DC current gain.
  • High VEBO (VEBO≥25V).
  • High reverse hFE (150 typ).
  • Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temper.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1858B NPN Epitaxial Planar Silicon Transistor 2SC3792 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.