Datasheet4U Logo Datasheet4U.com

2SC4188 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ.
  • Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Diss.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4180 Silicon Epitaxial Planar Transistor GME
2SC4180 NPN SILICON EPITAXIAL TRANSISTOR NEC
2SC4180 NPN Silicon Epitaxial Transistor Kexin
2SC4180 TRANSISTOR Jin Yu Semiconductor
2SC4181 NPN SILICON EPITAXIAL TRANSISTORS NEC

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4104 PNP/NPN Epitaxial Planar Silicon Transistors
2SC4105 NPN Triple Diffused Planar Silicon Transistor
2SC4106 NPN Triple Diffused Planar Silicon Transistor
2SC4107 NPN Triple Diffused Planar Silicon Transistor
2SC4108 NPN Triple Diffused Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ. · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.