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2SC4293 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed (tf=300ns max).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4293] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol.

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Ordering number:EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=300ns max). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4293] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.8 2.0 1.0 123 5.45 5.45 Conditions 3.5 20.4 2.0 0.