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2SC4412 - NPN Transistor

Key Features

  • High breakdown voltage (VCEO≥300V).
  • Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ).
  • Excellent DC current gain ratio (hFE ratio : 0.95 typ).
  • Adoption of FBET process. Package Dimensions unit:mm 2018B [2SC4412] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3019 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection, High-Voltage Driver Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ). · Excellent DC current gain ratio (hFE ratio : 0.95 typ). · Adoption of FBET process. Package Dimensions unit:mm 2018B [2SC4412] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.