Adoption of MBIT process. Package Dimensions
unit:mm
2022A
[2SC4435]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC I.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number:EN3791
NPN Triple Diffused Planar Silicon Transistor
2SC4435
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
Features
· Fast switching speed (tf=300ns max). · High brocking voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC4435]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
1.6 2.0
1.0
12 0.6
3
1.4
5.45 5.45
Conditions
20.0
1.4 0.