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2SC4449 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage.
  • Small reverse transfer capacitance and excellent high frequency characteristic.
  • Excellent DC current gain.
  • Adoption of FBET process. Package Dimensions unit:mm 2003B [2SC4449] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tempe.

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Ordering number:EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features · High breakdown voltage. · Small reverse transfer capacitance and excellent high frequency characteristic. · Excellent DC current gain. · Adoption of FBET process. Package Dimensions unit:mm 2003B [2SC4449] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 1.