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2SC4480 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Large current capacity.
  • Adoption of MBIT process.
  • High DC current gain.
  • Low collector-to-emitter saturation voltage.
  • High VEBO. Package Dimensions unit:mm 2064A [2SC4480] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Stora.

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Ordering number:EN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features · Large current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. Package Dimensions unit:mm 2064A [2SC4480] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.