2SC4490
Features
- High breakdown voltage (VCEO≥300V).
- Excellent high frequency characteristic.
- Adoption of MBIT process.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1710/2SC4490
High-Definition CRT Display Video Output Applications
Package Dimensions unit:mm 2064
[2SA1710/2SC4490]
( ) : 2SA1710
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance
ICBO IEBO h FE f T VCE(sat)
VBE(sat) Cob
VCB=(- )200V, IE=0 VEB=(- )4V, IC=0 VCE=(- )10V, IC=(- )10m A VCE=(- )30V, IC=(- )10m A IC=(- )20m A, IB=(- )2m...
