2SC4644 Key Features
- Adoption of MBIT process
- High breakdown voltage (VCEO≥400V)
- Excellent linearity of hFE
| Part Number | Description |
|---|---|
| 2SC4641 | PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| 2SC4645 | NPN TRANSISTOR |
| 2SC4646 | NPN TRANSISTOR |
| 2SC4600 | NPN TRANSISTOR |
| 2SC4601 | NPN TRANSISTOR |