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2SC4660 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High fT (fT=2.2GHz typ).
  • Large current (IC=300mA).
  • Adoption of FBET process. Package Dimensions unit:mm 2042B [2SC4660] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 1.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature T.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4600 NPN TRANSISTOR
2SC4601 NPN TRANSISTOR
2SC4602 NPN TRANSISTOR
2SC4612 PNP/NPN Epitaxial Planar Silicon Transistors
2SC4613 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4692 NPN Epitaxial Planar Silicon Transistor 2SC4660 High-Definition CRT Display Video Output Driver Applications Features · High fT (fT=2.2GHz typ) · Large current (IC=300mA) · Adoption of FBET process. Package Dimensions unit:mm 2042B [2SC4660] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 1.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Electrical Characteristics at Ta = 25˚C 2.4 4.