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2SC4710 - NPN TRANSISTOR

Key Features

  • High breakdown voltage (VCEO min=2100V).
  • Small Cob (typical Cob=1.3pF).
  • Wide ASO.
  • High reliability (Adoption of HVP process).
  • Full isolation package. Package Dimensions unit:mm 2079B [2SC4710] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Colle.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package. Package Dimensions unit:mm 2079B [2SC4710] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.