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2SC4737 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High DC current gain.
  • Wide ASO.
  • On-chip Zener diode of 60 ±10V between collector and base.
  • Uniformity in collector-to-base breakdown voltage.
  • High inductive load handling capability. Specifications Package Dimensions unit:mm 2084B [2SC4737] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 2.5 2.5 7.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : FLP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Features · High DC current gain. · Wide ASO. · On-chip Zener diode of 60 ±10V between collector and base. · Uniformity in collector-to-base breakdown voltage. · High inductive load handling capability. Specifications Package Dimensions unit:mm 2084B [2SC4737] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 2.5 2.5 7.5 0.