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2SC4770 - NPN TRANSISTOR

Key Features

  • High speed (tf=100ns typ).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4770] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 Specifications 123 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collecto.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4770] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 Specifications 123 5.45 5.