2SC4869 Datasheet PDF - Sanyo Semicon Device NPN Epitaxial Planar Silicon Transistor Specs

2SC4869 - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

Low noise : NF=1.2dB typ (f=1GHz).
High gain : S21e2=15dB typ (f=1GHz).
High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC4869] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC.

Datasheet Details

Part number	2SC4869
Manufacturer	Sanyo Semicon Device
File Size	123.88 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4869 Datasheet
Additional preview pages of the 2SC4869 datasheet.

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Full PDF Text Transcription

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Ordering number:EN5044 NPN Epitaxial Planar Silicon Transistor 2SC4869 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC4869] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.

Published: Apr 3, 2005 |