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2SC4910 - NPN TRANSISTOR

Key Features

  • On-chip emitter ballast resistors. Package Dimensions unit:mm 2084B [2SC4910] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg 2.5 Conditions Electrical Characteristics at T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features · On-chip emitter ballast resistors. Package Dimensions unit:mm 2084B [2SC4910] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg 2.