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2SC5347 - NPN TRANSISTOR

Key Features

  • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff C.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET 2SC5347 NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz).