High cutoff frequency : fT=6.7GHz typ. 2
Package Dimensions
unit:mm 2038A
[2SC5415]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm.
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Ordering number:ENN5911
NPN Epitaxial Planar Silicon Transistor
2SC5415
High-Frequency Low-Noise Amplifier Applications
Features
· High gain : S21e =9dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ.
2
Package Dimensions
unit:mm 2038A
[2SC5415]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.
2SC5415 Datasheet
