Datasheet4U Logo Datasheet4U.com

2SC5537 - NPN TRANSISTOR

Key Features

  • Low voltage, low current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).
  • Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5537] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage T.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5536A RF Transistor ON Semiconductor
2SC5501A RF Transistor ON Semiconductor
2SC5505 Silicon NPN Transistor Panasonic
2SC5507 NPN TRANSISTOR NEC
2SC5508 NPN TRANSISTOR NEC

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5534 NPN TRANSISTOR
2SC5536 NPN TRANSISTOR
2SC5538 NPN TRANSISTOR
2SC5539 NPN TRANSISTOR
2SC5501 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Features · Low voltage, low current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5537] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 0.6 Ratings 12 6 1.