Large allowable collector dissipation (1.3W max). Package Dimensions
unit:mm 2038A
[2SC5551]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VE.
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Ordering number:ENN6328
NPN Epitaxial Planar Silicon Transistor
2SC5551
High-Frequency Medium-Output Amplifier Applications
Features
· High fT : (fT=3.5GHz typ). · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).
Package Dimensions
unit:mm 2038A
[2SC5551]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings 40 30 2 300 600 1.
2SC5551 Datasheet
