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2SC5763 - NPN TRANSISTOR

Key Features

  • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C 2.55 SANYO : TO-220 Conditions Ratings 700 400 8 7 14 1.