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2SC5915 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Key Features

  • 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.55 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC IC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7408 2SC5915 NPN Epitaxial Planar Silicon Transistor 2SC5915 High-Current Switching Applications Applications • Package Dimensions unit : mm 2069C [2SC5915] 0.8 Relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.55 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 120 120 50 6 10 15 2 1.