2SC5979
Overview
- Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation.
| Part | 2SC5979 |
|---|---|
| Description | NPN Epitaxial Planar Silicon Transistor |
| Category | Transistor |
| Manufacturer | SANYO |
| Size | 64.51 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC5976 | Toshiba | Silicon NPN Transistor |
| 2SC5975 | Renesas | Silicon NPN Epitaxial Type Transistor |
| 2SC5974 | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |
| 2SC5974A | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |
| 2SC5974B | Isahaya Electronics Corporation | SMALL-SIGNAL TRANSISTOR |